Model of electronic states at the Si-Si02 interface

The electronic properties of the interface between crystalline Si and its amorphous oxide SiO 2 have been studied within the tight-binding approximation by saturating the dangling bonds in three different surfaces (111), (110), and (100) of a semi-infinite Si crystal with SiO2 Bethe lattices. The lo...

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Principais autores: Carriço, Artur da Silva, Barrio, R. A., Elliot, R. J.
Formato: article
Idioma:English
Publicado em: American Physical Society
Assuntos:
Model of electronic states
Endereço do item:https://repositorio.ufrn.br/jspui/handle/123456789/28676
https://doi.org/10.1103/PhysRevB.34.872
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spelling ri-123456789-286762020-05-05T04:27:32Z Model of electronic states at the Si-Si02 interface Carriço, Artur da Silva Barrio, R. A. Elliot, R. J. Model of electronic states The electronic properties of the interface between crystalline Si and its amorphous oxide SiO 2 have been studied within the tight-binding approximation by saturating the dangling bonds in three different surfaces (111), (110), and (100) of a semi-infinite Si crystal with SiO2 Bethe lattices. The localized states due to isolated dangling bonds in the interfaces (Pb centers) are found to be roughly at the same energy, in the Si gap for the (111) and (110) cases, but the (100) interface differs substantially from the other two. It is also found that the value of the site-energy interaction parameter on the Si defect site is important in determining the energy of the defect state. 2020-03-26T20:58:03Z 2020-03-26T20:58:03Z 1986-07-15 article CARRIÇO, Artur da Silva.; ELLIOTT, R. J.; BARRIO, R. A. Model of electronic states at the Si-SiO2 interface. Physical Review B - Condensed Matter and Materials Physics, v. 34, p. 872-878, 1986. Disponível em: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.34.872 Acesso: 26 mar. 2020. 2469-9969 (online), 2469-9950 (print) https://repositorio.ufrn.br/jspui/handle/123456789/28676 https://doi.org/10.1103/PhysRevB.34.872 en application/pdf American Physical Society
institution Repositório Institucional
collection RI - UFRN
language English
topic Model of electronic states
spellingShingle Model of electronic states
Carriço, Artur da Silva
Barrio, R. A.
Elliot, R. J.
Model of electronic states at the Si-Si02 interface
description The electronic properties of the interface between crystalline Si and its amorphous oxide SiO 2 have been studied within the tight-binding approximation by saturating the dangling bonds in three different surfaces (111), (110), and (100) of a semi-infinite Si crystal with SiO2 Bethe lattices. The localized states due to isolated dangling bonds in the interfaces (Pb centers) are found to be roughly at the same energy, in the Si gap for the (111) and (110) cases, but the (100) interface differs substantially from the other two. It is also found that the value of the site-energy interaction parameter on the Si defect site is important in determining the energy of the defect state.
format article
author Carriço, Artur da Silva
Barrio, R. A.
Elliot, R. J.
author_facet Carriço, Artur da Silva
Barrio, R. A.
Elliot, R. J.
author_sort Carriço, Artur da Silva
title Model of electronic states at the Si-Si02 interface
title_short Model of electronic states at the Si-Si02 interface
title_full Model of electronic states at the Si-Si02 interface
title_fullStr Model of electronic states at the Si-Si02 interface
title_full_unstemmed Model of electronic states at the Si-Si02 interface
title_sort model of electronic states at the si-si02 interface
publisher American Physical Society
publishDate 2020
url https://repositorio.ufrn.br/jspui/handle/123456789/28676
https://doi.org/10.1103/PhysRevB.34.872
work_keys_str_mv AT carricoarturdasilva modelofelectronicstatesatthesisi02interface
AT barriora modelofelectronicstatesatthesisi02interface
AT elliotrj modelofelectronicstatesatthesisi02interface
_version_ 1773963517545676800

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