Model of electronic states at the Si-Si02 interface
The electronic properties of the interface between crystalline Si and its amorphous oxide SiO 2 have been studied within the tight-binding approximation by saturating the dangling bonds in three different surfaces (111), (110), and (100) of a semi-infinite Si crystal with SiO2 Bethe lattices. The lo...
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| Principais autores: | , , |
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| Formato: | article |
| Idioma: | English |
| Publicado em: |
American Physical Society
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| Assuntos: | |
| Endereço do item: | https://repositorio.ufrn.br/jspui/handle/123456789/28676 https://doi.org/10.1103/PhysRevB.34.872 |
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