Magnetization reversal in single ferromagnetic rectangular nanowires
We report on the magnetoresistance (MR) investigation of the magnetization reversal processes in single rectangular nanowire of Permalloy. A set of nanowires with lengths ranging from 6 to 20 μm, thicknesses fixed in 10 nm, and widths between 250 nm and 1.2 μm, was fabricated by means of AFM loca...
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| Principais autores: | , , , |
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| Formato: | article |
| Idioma: | eng |
| Publicado em: |
IOP Publishing
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| Endereço do item: | https://repositorio.ufrn.br/jspui/handle/123456789/24384 |
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| Resumo: | We report on the magnetoresistance (MR) investigation of the magnetization
reversal processes in single rectangular nanowire of Permalloy. A set of nanowires with
lengths ranging from 6 to 20 μm, thicknesses fixed in 10 nm, and widths between 250 nm and
1.2 μm, was fabricated by means of AFM local anodic oxidation lithography. Magnetoresistive
hysteresis loops show an abrupt jump corresponding to the magnetization reversal that depends
on the angle between the wire axis and the applied magnetic field direction. The field value
corresponding to the abrupt jump of the MR was associated to the nucleation field deduced
from the Brown equations. By the angular dependence of this magnetization reversal field we
were able to identify the nucleation mode as the magnetization buckling. We have investigated
the temperature dependence of the switching field as well as its stochastic nature as a function
of the in-plane angle |
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