Deposição de A/N por sputtering não reativo
In this work we deposit via non-reactive magnetron sputtering of radio-frequency nanofilmes of nitreto of aluminum(AlN). The nanofilms aluminum nitride are semiconductors materials with high thermal conductivity, high melting point, piezoelectricity and wide band gap (6, 2 eV) with hexagonal wurtzit...
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| Formato: | Dissertação |
| Idioma: | por |
| Publicado em: |
Universidade Federal do Rio Grande do Norte
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| Endereço do item: | https://repositorio.ufrn.br/jspui/handle/123456789/16566 |
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| Resumo: | In this work we deposit via non-reactive magnetron sputtering of radio-frequency nanofilmes
of nitreto of aluminum(AlN). The nanofilms aluminum nitride are semiconductors materials
with high thermal conductivity, high melting point, piezoelectricity and wide band gap (6,
2 eV) with hexagonal wurtzite crystal structure, belonging to the group of new materials called
III-V nitrides in which together with the gallium nitride and indium nitride have attracted much
interest because they have physical and chemical properties relevant to new technological applications,
mainly in microelectronic and optoelectronic devices. Three groups were deposited
with thicknesses nanofilms time dependent on two substrates (glass and silicon) at a temperature
of 25 ° C. The nanofilms AlN were characterized using three techniques, X-ray diffraction,
Raman spectroscopy and atomic force microscopy (AFM), examined the morphology of these.
Through the analysis of X-rays get the thickness of each sample with its corresponding deposition
rate. The analysis of X-rays also revealed that nanofilms are not crystalline, showing
the amorphous character of the samples. The results obtained by the technique, atomic force
microscopy (AFM) agree with those obtained using the technique of X-rays. Characterization
by Raman spectroscopy revealed the existence of active modes characteristic of AlN in the
samples |
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